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AMD R5316G1609U2K 8GB
G Skill Intl F4-2666C15-8GRR 8GB

AMD R5316G1609U2K 8GB vs G Skill Intl F4-2666C15-8GRR 8GB

总分
star star star star star
AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分
star star star star star
G Skill Intl F4-2666C15-8GRR 8GB

G Skill Intl F4-2666C15-8GRR 8GB

差异 规格 评论

差异

AMD R5316G1609U2K 8GB 需要考虑的原因
AMD R5316G1609U2K 8GB
报告一个错误
G Skill Intl F4-2666C15-8GRR 8GB 需要考虑的原因
G Skill Intl F4-2666C15-8GRR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 73
    左右 -109% 更低的延时
  • 更快的读取速度，GB/s
    15.8 left arrow 6.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.2 left arrow 5.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
AMD R5316G1609U2K 8GB
G Skill Intl F4-2666C15-8GRR 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    73 left arrow 35
  • 读取速度，GB/s
    6.3 left arrow 15.8
  • 写入速度，GB/s
    5.2 left arrow 12.2
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1309 left arrow 3052

AMD R5316G1609U2K 8GB RAM的比较

Transcend Information TS1GLK64V3H 8GB
Ramos Technology RMB4GB584CA3-13HC 4GB

G Skill Intl F4-2666C15-8GRR 8GB RAM的比较

Nanya Technology M2F8G64CB8HC9N-DI 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M378A1K43EB2-CWE 8GB
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内存RAM
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G Skill Intl F4-3600C16-16GTZR 16GB
G Skill Intl F4-3600C16-16GTZR 16GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
G Skill Intl F4-3600C17-16GTZ 16GB
G Skill Intl F4-3600C17-16GTZ 16GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Kingston KHX3333C16D4/16GX 16GB
Kingston KHX3333C16D4/16GX 16GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Patriot Memory (PDP Systems) PSD44G266641 4GB
Patriot Memory (PDP Systems) PSD44G266641 4GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-2666C16-8GRB 8GB
G Skill Intl F4-2666C16-8GRB 8GB
内存RAM
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD16GX3M2A1866C9 8GB
G Skill Intl F4-3600C16-16GVKC 16GB
G Skill Intl F4-3600C16-16GVKC 16GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
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Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
内存RAM
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Kingston 99U5458-008.A00LF 4GB
GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB
内存RAM
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Maxsun MSD48G30M3 8GB
Maxsun MSD48G30M3 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Netac Technology Co Ltd E40832A 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
G Skill Intl F4-3600C19-8GSXW 8GB
G Skill Intl F4-3600C19-8GSXW 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Apacer Technology 78.B1GN3.4032B 4GB
Apacer Technology 78.B1GN3.4032B 4GB
内存RAM