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AMD R5316G1609U2K 8GB
Micron Technology 4ATF51264HZ-2G3B1 4GB

AMD R5316G1609U2K 8GB vs Micron Technology 4ATF51264HZ-2G3B1 4GB

总分
star star star star star
AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分
star star star star star
Micron Technology 4ATF51264HZ-2G3B1 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

差异 规格 评论

差异

AMD R5316G1609U2K 8GB 需要考虑的原因
AMD R5316G1609U2K 8GB
报告一个错误
Micron Technology 4ATF51264HZ-2G3B1 4GB 需要考虑的原因
Micron Technology 4ATF51264HZ-2G3B1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 73
    左右 -109% 更低的延时
  • 更快的读取速度，GB/s
    14.8 left arrow 6.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.2 left arrow 5.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
AMD R5316G1609U2K 8GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    73 left arrow 35
  • 读取速度，GB/s
    6.3 left arrow 14.8
  • 写入速度，GB/s
    5.2 left arrow 11.2
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1309 left arrow 2336

AMD R5316G1609U2K 8GB RAM的比较

Transcend Information TS1GLK64V3H 8GB
Ramos Technology RMB4GB584CA3-13HC 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
Kingston 9905625-096.A00G 16GB
Kingston 9905625-096.A00G 16GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Apacer Technology GD2.1831WS.001 16GB
Apacer Technology GD2.1831WS.001 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Crucial Technology BL16G36C16U4BL.M16FE 16GB
Crucial Technology BL16G36C16U4BL.M16FE 16GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Samsung M378A5143TB2-CTD 4GB
Samsung M378A5143TB2-CTD 4GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
内存RAM
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD16GX3M2A1866C9 8GB
Team Group Inc. TEANGROUP-UD4-2400 8GB
Team Group Inc. TEANGROUP-UD4-2400 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMK128GX4M4A2400C16 32GB
Corsair CMK128GX4M4A2400C16 32GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB
GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-2800C16-4GVR 4GB
G Skill Intl F4-2800C16-4GVR 4GB
内存RAM
Kingston KTC1G-UDIMM 1GB
Kingston KTC1G-UDIMM 1GB
G Skill Intl F4-2400C17-4GVR 4GB
G Skill Intl F4-2400C17-4GVR 4GB
内存RAM
A-DATA Technology HY64C1C1624ZY 4GB
A-DATA Technology HY64C1C1624ZY 4GB
Micron Technology AFLD48VH1P 8GB
Micron Technology AFLD48VH1P 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Kingston 9965640-015.A00G 32GB
Kingston 9965640-015.A00G 32GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMK8GX4M1Z3600C18 8GB
Corsair CMK8GX4M1Z3600C18 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology CT16G4DFRA266.C8FB 16GB
Crucial Technology CT16G4DFRA266.C8FB 16GB
内存RAM