AMD R5316G1609U2K 8GB vs SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

需要考虑的原因
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

报告一个错误

低于PassMark测试中的延时，ns

42 73

左右 -74% 更低的延时
更快的读取速度，GB/s

15.7 6.3

测试中的平均数值
更快的写入速度，GB/s

11.9 5.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 42
读取速度，GB/s

6.3 15.7
写入速度，GB/s

5.2 11.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1309 2737

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT51264BD1339.M16F 4GB

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SK Hynix HMA851S6AFR6N-UH 4GB

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Kingston KHX2400C1C14/16G 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Kingston KHX2800C14D4/4GX 4GB

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Kingston 9905403-011.A03LF 2GB

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SK Hynix DDR2 800 2G 2GB

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Crucial Technology CT16G4DFD8266.C16FD1 16GB

Crucial Technology CT16G4DFD8266.C16FD1 16GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Golden Empire CL15-17-17 D4-3000 8GB

Golden Empire CL15-17-17 D4-3000 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Kingston KMKYF9-MIH 8GB

Kingston KMKYF9-MIH 8GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

Apacer Technology 78.C1GQ5.C7C0B 8GB

Apacer Technology 78.C1GQ5.C7C0B 8GB