AMD R5316G1609U2K 8GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

总分

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

差异规格评论

差异

AMD R5316G1609U2K 8GB

需要考虑的原因
AMD R5316G1609U2K 8GB

报告一个错误

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 73

左右 -284% 更低的延时
更快的读取速度，GB/s

18.7 6.3

测试中的平均数值
更快的写入速度，GB/s

14.2 5.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

AMD R5316G1609U2K 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 19
读取速度，GB/s

6.3 18.7
写入速度，GB/s

5.2 14.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1309 3220

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3000C16-16GTZN 16GB

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SK Hynix HMT451U7BFR8C-RD 4GB

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Essencore Limited IMA41GU6MFR8N-CF0 8GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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Corsair CMK8GX4M2A2800C16 4GB

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Kingston ACR256X64D3S1333C9 2GB

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Micron Technology 18HTF12872AY-800F1 1GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Samsung M378B5673EH1-CF8 2GB

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Corsair CM4X16GE2933C19S2 16MB

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Samsung M393B1K70QB0-CK0 8GB

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Micron Technology 16ATF2G64HZ-2G3E2 16GB

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