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AMD R5316G1609U2K 8GB
Wilk Elektronik S.A. GY2400D464L15S/4G 4GB

AMD R5316G1609U2K 8GB vs Wilk Elektronik S.A. GY2400D464L15S/4G 4GB

总分
star star star star star
AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

总分
star star star star star
Wilk Elektronik S.A. GY2400D464L15S/4G 4GB

Wilk Elektronik S.A. GY2400D464L15S/4G 4GB

差异 规格 评论

差异

AMD R5316G1609U2K 8GB 需要考虑的原因
AMD R5316G1609U2K 8GB
报告一个错误
Wilk Elektronik S.A. GY2400D464L15S/4G 4GB 需要考虑的原因
Wilk Elektronik S.A. GY2400D464L15S/4G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 73
    左右 -217% 更低的延时
  • 更快的读取速度，GB/s
    16.3 left arrow 6.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.4 left arrow 5.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
AMD R5316G1609U2K 8GB
Wilk Elektronik S.A. GY2400D464L15S/4G 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    73 left arrow 23
  • 读取速度，GB/s
    6.3 left arrow 16.3
  • 写入速度，GB/s
    5.2 left arrow 12.4
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1309 left arrow 2637

AMD R5316G1609U2K 8GB RAM的比较

Transcend Information TS1GLK64V3H 8GB
Ramos Technology RMB4GB584CA3-13HC 4GB

Wilk Elektronik S.A. GY2400D464L15S/4G 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Wilk Elektronik S.A. GY2400D464L15S/4G 4GB
Wilk Elektronik S.A. GY2400D464L15S/4G 4GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Transcend Information JM2666HSB-8G 8GB
Transcend Information JM2666HSB-8G 8GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Corsair CMW32GX4M2C3000C15 16GB
内存RAM
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Samsung M3 78T2863QZS-CF7 1GB
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内存RAM