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AMD R534G1601U1S-UO 4GB
A-DATA Technology DDR4 2800 2OZ 4GB

AMD R534G1601U1S-UO 4GB vs A-DATA Technology DDR4 2800 2OZ 4GB

总分
star star star star star
AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

总分
star star star star star
A-DATA Technology DDR4 2800 2OZ 4GB

A-DATA Technology DDR4 2800 2OZ 4GB

差异 规格 评论

差异

AMD R534G1601U1S-UO 4GB 需要考虑的原因
AMD R534G1601U1S-UO 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 33
    左右 18% 更低的延时
A-DATA Technology DDR4 2800 2OZ 4GB 需要考虑的原因
A-DATA Technology DDR4 2800 2OZ 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.2 left arrow 14.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.2 left arrow 9.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
AMD R534G1601U1S-UO 4GB
A-DATA Technology DDR4 2800 2OZ 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 33
  • 读取速度，GB/s
    14.7 left arrow 16.2
  • 写入速度，GB/s
    9.2 left arrow 12.2
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2272 left arrow 3026

AMD R534G1601U1S-UO 4GB RAM的比较

AMD R534G1601U1S 4GB
Samsung M378B5273CH0-CH9 4GB

A-DATA Technology DDR4 2800 2OZ 4GB RAM的比较

A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
A-DATA Technology DDR4 2800 2OZ 4GB
A-DATA Technology DDR4 2800 2OZ 4GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB
Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Crucial Technology BLS4G4D240FSC.8FBD2 4GB
Crucial Technology BLS4G4D240FSC.8FBD2 4GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
G Skill Intl F4-2400C15-8GFX 8GB
G Skill Intl F4-2400C15-8GFX 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Kingston KHX3333C16D4/8GX 8GB
Kingston KHX3333C16D4/8GX 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB
A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston 9905625-075.A00G 16GB
Kingston 9905625-075.A00G 16GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Samsung M378A1G43TB1-CTD 8GB
Samsung M378A1G43TB1-CTD 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M378A5143TB2-CTD 4GB
Samsung M378A5143TB2-CTD 4GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMW32GX4M2Z3200C16 16GB
Corsair CMW32GX4M2Z3200C16 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Samsung M378A2G43BB3-CWE 16GB
Samsung M378A2G43BB3-CWE 16GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
A-DATA Technology DDR4 2400 2OZ 8GB
A-DATA Technology DDR4 2400 2OZ 8GB
内存RAM