Asgard VMA45UG-MEC1U2AW1 8GB vs A-DATA Technology AD4S320038G22-B 8GB

总分

Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

总分

A-DATA Technology AD4S320038G22-B 8GB

A-DATA Technology AD4S320038G22-B 8GB

差异规格评论

差异

Asgard VMA45UG-MEC1U2AW1 8GB

需要考虑的原因
Asgard VMA45UG-MEC1U2AW1 8GB

报告一个错误

A-DATA Technology AD4S320038G22-B 8GB

需要考虑的原因
A-DATA Technology AD4S320038G22-B 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 47

左右 -21% 更低的延时
更快的读取速度，GB/s

15.1 11.8

测试中的平均数值
更快的写入速度，GB/s

10.1 9.2

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33 更高的带宽

规格

完整的技术规格清单

Asgard VMA45UG-MEC1U2AW1 8GB

A-DATA Technology AD4S320038G22-B 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

47 39
读取速度，GB/s

11.8 15.1
写入速度，GB/s

9.2 10.1
内存带宽，mbps

19200 25600

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2323 2478

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Asgard VMA45UG-MEC1U2AW1 8GB

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A-DATA Technology AD4S320038G22-B 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Corsair CMD64GX4M4B3000C15 16GB

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

Crucial Technology CT4G4DFS8266.C8FF 4GB

Crucial Technology CT4G4DFS8266.C8FF 4GB

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G Skill Intl F4-3200C16-8GTZR 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB