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ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-3200C15-16GTZKW 16GB

ASint Technology SSA302G08-EGN1C 4GB vs G Skill Intl F4-3200C15-16GTZKW 16GB

总分
star star star star star
ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

总分
star star star star star
G Skill Intl F4-3200C15-16GTZKW 16GB

G Skill Intl F4-3200C15-16GTZKW 16GB

差异 规格 评论

差异

ASint Technology SSA302G08-EGN1C 4GB 需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB
报告一个错误
G Skill Intl F4-3200C15-16GTZKW 16GB 需要考虑的原因
G Skill Intl F4-3200C15-16GTZKW 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 26
    左右 -30% 更低的延时
  • 更快的读取速度，GB/s
    19.1 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.1 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-3200C15-16GTZKW 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 20
  • 读取速度，GB/s
    12.6 left arrow 19.1
  • 写入速度，GB/s
    9.5 left arrow 15.1
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2174 left arrow 3506

ASint Technology SSA302G08-EGN1C 4GB RAM的比较

Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB

G Skill Intl F4-3200C15-16GTZKW 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Kingston 9905403-156.A00LF 2GB
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Crucial Technology BL16G26C16U4B.16FE 16GB
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内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Kingston XN205T-MIE 16GB
Kingston XN205T-MIE 16GB
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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
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内存RAM
G Skill Intl F5-6000J3636F16G 16GB
G Skill Intl F5-6000J3636F16G 16GB
G Skill Intl F5-6000U3636E16G 16GB
G Skill Intl F5-6000U3636E16G 16GB
内存RAM
Samsung M323R2GA3BB0-CQKOD 16GB
Samsung M323R2GA3BB0-CQKOD 16GB
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Patriot Memory (PDP Systems) 4133 C19 Series 8GB
内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
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内存RAM
Corsair CM2X1024-6400 1GB
Corsair CM2X1024-6400 1GB
Super Talent F24UB16GV 16GB
Super Talent F24UB16GV 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
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Kingston KHX3733C19D4/16GX 16GB
内存RAM
Kingston 99U5403-465.A00LF 8GB
Kingston 99U5403-465.A00LF 8GB
G Skill Intl F4-3200C16-16GTZRX 16GB
G Skill Intl F4-3200C16-16GTZRX 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB
SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Mushkin MR[ABC]4U266GHHF8G 8GB
Mushkin MR[ABC]4U266GHHF8G 8GB
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Crucial Technology BL16G32C16S4B.M8FB1 16GB
Crucial Technology BL16G32C16S4B.M8FB1 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
内存RAM