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ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-3200C16-8GIS 8GB

ASint Technology SSA302G08-EGN1C 4GB vs G Skill Intl F4-3200C16-8GIS 8GB

总分
star star star star star
ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

总分
star star star star star
G Skill Intl F4-3200C16-8GIS 8GB

G Skill Intl F4-3200C16-8GIS 8GB

差异 规格 评论

差异

ASint Technology SSA302G08-EGN1C 4GB 需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 30
    左右 13% 更低的延时
G Skill Intl F4-3200C16-8GIS 8GB 需要考虑的原因
G Skill Intl F4-3200C16-8GIS 8GB
报告一个错误
  • 更快的读取速度，GB/s
    18.2 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.2 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
ASint Technology SSA302G08-EGN1C 4GB
G Skill Intl F4-3200C16-8GIS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 30
  • 读取速度，GB/s
    12.6 left arrow 18.2
  • 写入速度，GB/s
    9.5 left arrow 14.2
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2174 left arrow 3389

ASint Technology SSA302G08-EGN1C 4GB RAM的比较

Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB

G Skill Intl F4-3200C16-8GIS 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology BL16G32C16U4B.M8FB1 16GB
Crucial Technology BL16G32C16U4B.M8FB1 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
KingSpec KingSpec 16GB
KingSpec KingSpec 16GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3000C15-4GRBB 4GB
G Skill Intl F4-3000C15-4GRBB 4GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Shenzhen Technology Co Ltd 8GB
Shenzhen Technology Co Ltd 8GB
内存RAM
SK Hynix HMT451S6DFR8A-PB 4GB
SK Hynix HMT451S6DFR8A-PB 4GB
G Skill Intl F4-3000C16-8GSXWB 8GB
G Skill Intl F4-3000C16-8GSXWB 8GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Golden Empire CL16-16-16 D4-2400 8GB
Golden Empire CL16-16-16 D4-2400 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-4000C18-8GTZSW 8GB
G Skill Intl F4-4000C18-8GTZSW 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
A-DATA Technology AM2P32NC8W1-BCFS 8GB
A-DATA Technology AM2P32NC8W1-BCFS 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
G Skill Intl F4-3200C14-8GTZKY 8GB
G Skill Intl F4-3200C14-8GTZKY 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology DDR4 3600 8GB
A-DATA Technology DDR4 3600 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
内存RAM
Samsung M471B5773DH0-CH9 2GB
Samsung M471B5773DH0-CH9 2GB
Corsair CM4X4GF2666Z16K4 4GB
Corsair CM4X4GF2666Z16K4 4GB
内存RAM