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ASint Technology SSZ302G08-GGNHC 2GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB

ASint Technology SSZ302G08-GGNHC 2GB vs Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB

总分
star star star star star
ASint Technology SSZ302G08-GGNHC 2GB

ASint Technology SSZ302G08-GGNHC 2GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB

差异 规格 评论

差异

ASint Technology SSZ302G08-GGNHC 2GB 需要考虑的原因
ASint Technology SSZ302G08-GGNHC 2GB
报告一个错误
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 95
    左右 -239% 更低的延时
  • 更快的读取速度，GB/s
    11.8 left arrow 4.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.9 left arrow 3.1
    测试中的平均数值

规格

完整的技术规格清单
ASint Technology SSZ302G08-GGNHC 2GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    95 left arrow 28
  • 读取速度，GB/s
    4.2 left arrow 11.8
  • 写入速度，GB/s
    3.1 left arrow 7.9
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    635 left arrow 1920

ASint Technology SSZ302G08-GGNHC 2GB RAM的比较

Ramaxel Technology RMT3170MN68F9F1600 4GB
Samsung M378A5244CB0-CRC 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-PB 4GB RAM的比较

Samsung M471B5173QH0-YK0 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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