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Avexir Technologies Corporation DDR3-2000 CL9 4GB 4GB
G Skill Intl F4-4400C16-8GTZR 8GB

Avexir Technologies Corporation DDR3-2000 CL9 4GB 4GB vs G Skill Intl F4-4400C16-8GTZR 8GB

总分
star star star star star
Avexir Technologies Corporation DDR3-2000 CL9 4GB 4GB

Avexir Technologies Corporation DDR3-2000 CL9 4GB 4GB

总分
star star star star star
G Skill Intl F4-4400C16-8GTZR 8GB

G Skill Intl F4-4400C16-8GTZR 8GB

差异 规格 评论

差异

Avexir Technologies Corporation DDR3-2000 CL9 4GB 4GB 需要考虑的原因
Avexir Technologies Corporation DDR3-2000 CL9 4GB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 27
    左右 30% 更低的延时
G Skill Intl F4-4400C16-8GTZR 8GB 需要考虑的原因
G Skill Intl F4-4400C16-8GTZR 8GB
报告一个错误
  • 更快的读取速度，GB/s
    21.9 left arrow 17.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    19.1 left arrow 11.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Avexir Technologies Corporation DDR3-2000 CL9 4GB 4GB
G Skill Intl F4-4400C16-8GTZR 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    19 left arrow 27
  • 读取速度，GB/s
    17.9 left arrow 21.9
  • 写入速度，GB/s
    11.8 left arrow 19.1
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3148 left arrow 4044

Avexir Technologies Corporation DDR3-2000 CL9 4GB 4GB RAM的比较

Cortus SAS 8ATF1G64AZ-2G6E1 8GB

G Skill Intl F4-4400C16-8GTZR 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMD16GX4M4C3200C16 4GB
Corsair CMD16GX4M4C3200C16 4GB
内存RAM
Avexir Technologies Corporation DDR3-2000 CL9 4GB 4GB
Avexir Technologies Corporation DDR3-2000 CL9 4GB 4GB
G Skill Intl F4-4400C16-8GTZR 8GB
G Skill Intl F4-4400C16-8GTZR 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB
Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB
内存RAM
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
Corsair CMW64GX4M4Z2933C16 16GB
Corsair CMW64GX4M4Z2933C16 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMK16GX4M2E4000C19 8GB
Corsair CMK16GX4M2E4000C19 8GB
内存RAM
A-DATA Technology AX5U5200C3816G-B 16GB
A-DATA Technology AX5U5200C3816G-B 16GB
A-DATA Technology AD5U480016G-B 16GB
A-DATA Technology AD5U480016G-B 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Patriot Memory (PDP Systems) 2133 C14 Series 8GB
Patriot Memory (PDP Systems) 2133 C14 Series 8GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Corsair CMW32GX4M4Z2933C16 8GB
Corsair CMW32GX4M4Z2933C16 8GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Samsung M474A2K43BB1-CRC 16GB
Samsung M474A2K43BB1-CRC 16GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-3200C16-8GTZN 8GB
G Skill Intl F4-3200C16-8GTZN 8GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Crucial Technology BLS16G4D26BFSE.16FBD 16GB
Crucial Technology BLS16G4D26BFSE.16FBD 16GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-3200C14-16GTRG 16GB
G Skill Intl F4-3200C14-16GTRG 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Kingston KV0M5R-HYD 8GB
Kingston KV0M5R-HYD 8GB
内存RAM