Corsair CM3X8GA2400C11Y2R 8GB vs G Skill Intl F4-3200C16-4GRB 4GB

总分

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

总分

G Skill Intl F4-3200C16-4GRB 4GB

G Skill Intl F4-3200C16-4GRB 4GB

差异规格评论

差异

Corsair CM3X8GA2400C11Y2R 8GB

需要考虑的原因
Corsair CM3X8GA2400C11Y2R 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 21

左右 5% 更低的延时
更快的读取速度，GB/s

19.1 18.6

测试中的平均数值

G Skill Intl F4-3200C16-4GRB 4GB

需要考虑的原因
G Skill Intl F4-3200C16-4GRB 4GB

报告一个错误

更快的写入速度，GB/s

14.4 13.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CM3X8GA2400C11Y2R 8GB

G Skill Intl F4-3200C16-4GRB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 21
读取速度，GB/s

19.1 18.6
写入速度，GB/s

13.1 14.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3252 3077

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston ACR26D4S9S8ME-8 8GB

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Maxsun MSD44G24Q0 4GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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Corsair CMK192GX4M12P3200C16 16GB

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Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

G Skill Intl F4-3000C16-8GTZR 8GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Samsung M386A2G40DB0-CPB 16GB

Samsung M386A2G40DB0-CPB 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Kingston HP37D4U1S8ME-16XR 16GB

Kingston HP37D4U1S8ME-16XR 16GB

SK Hynix HYMP512U64CP8-Y5 1GB

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Smart Modular SMU4TDC3C0K0464SCG 4GB

Smart Modular SMU4TDC3C0K0464SCG 4GB