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Corsair CM3X8GA2400C11Y2R 8GB
Micron Technology 16A6A2G64HZ-2-2E1 16GB

Corsair CM3X8GA2400C11Y2R 8GB vs Micron Technology 16A6A2G64HZ-2-2E1 16GB

总分
star star star star star
Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

总分
star star star star star
Micron Technology 16A6A2G64HZ-2-2E1 16GB

Micron Technology 16A6A2G64HZ-2-2E1 16GB

差异 规格 评论

差异

Corsair CM3X8GA2400C11Y2R 8GB 需要考虑的原因
Corsair CM3X8GA2400C11Y2R 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 22
    左右 9% 更低的延时
  • 更快的读取速度，GB/s
    19.1 left arrow 17
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.1 left arrow 8.9
    测试中的平均数值
Micron Technology 16A6A2G64HZ-2-2E1 16GB 需要考虑的原因
Micron Technology 16A6A2G64HZ-2-2E1 16GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Corsair CM3X8GA2400C11Y2R 8GB
Micron Technology 16A6A2G64HZ-2-2E1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    20 left arrow 22
  • 读取速度，GB/s
    19.1 left arrow 17.0
  • 写入速度，GB/s
    13.1 left arrow 8.9
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3252 left arrow 2623

Corsair CM3X8GA2400C11Y2R 8GB RAM的比较

Avexir Technologies Corporation DDR3-2800 CL12 8GB 8GB
Corsair CMY8GX3M2B2133C9 4GB

Micron Technology 16A6A2G64HZ-2-2E1 16GB RAM的比较

Crucial Technology BLT16G4D30AETA.K16FB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Patriot Memory (PDP Systems) 3600 C16 Series 8GB
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Samsung M393B5170FH0-CK0 4GB
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内存RAM
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AMD R5316G1609U2K 8GB
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内存RAM
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内存RAM
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Kingston 9965662-016.A00G 16GB
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