Corsair CMSX4GX3M1A1600C9 4GB vs Smart Modular SMU4TDC3C0K0464SCG 4GB

总分

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

总分

Smart Modular SMU4TDC3C0K0464SCG 4GB

Smart Modular SMU4TDC3C0K0464SCG 4GB

差异规格评论

差异

Corsair CMSX4GX3M1A1600C9 4GB

需要考虑的原因
Corsair CMSX4GX3M1A1600C9 4GB

报告一个错误

Smart Modular SMU4TDC3C0K0464SCG 4GB

需要考虑的原因
Smart Modular SMU4TDC3C0K0464SCG 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 38

左右 -73% 更低的延时
更快的读取速度，GB/s

18.1 12.8

测试中的平均数值
更快的写入速度，GB/s

12.3 9.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Corsair CMSX4GX3M1A1600C9 4GB

Smart Modular SMU4TDC3C0K0464SCG 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 22
读取速度，GB/s

12.8 18.1
写入速度，GB/s

9.1 12.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2099 2580

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 18ASF2G72AZ-2G1A1 16GB

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Kingston RB16D3LS1KBG/4G 4GB

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Kingston X5H5PW-MIB 8GB

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Lexar Co Limited LD4AS016G-H2666G 16GB

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G Skill Intl F4-3200C18-16GRS 16GB

G Skill Intl F4-3200C18-16GRS 16GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Corsair CMK16GX4M2L3000C15 8GB

Corsair CMK16GX4M2L3000C15 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

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Corsair CMK32GX4M4B3333C16 8GB

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Kingston KHX1600C9S3L/4G 4GB

Crucial Technology CT32G4DFD8266.C16FE 32GB

Crucial Technology CT32G4DFD8266.C16FE 32GB