Corsair CMSX4GX3M1A1600C9 4GB vs Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

总分

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

总分

Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

差异规格评论

差异

Corsair CMSX4GX3M1A1600C9 4GB

需要考虑的原因
Corsair CMSX4GX3M1A1600C9 4GB

报告一个错误

Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

需要考虑的原因
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 38

左右 -41% 更低的延时
更快的读取速度，GB/s

20.6 12.8

测试中的平均数值
更快的写入速度，GB/s

18.4 9.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Corsair CMSX4GX3M1A1600C9 4GB

Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 27
读取速度，GB/s

12.8 20.6
写入速度，GB/s

9.1 18.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2099 3826

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AM1P24HC4R1-BUNS 4GB

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Samsung M393B2G70BH0-YK0 16GB

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G Skill Intl F4-3000C14-16GTZR 16GB

G Skill Intl F4-3000C14-16GTZR 16GB

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology CT4G4SFS8266.M8FE 4GB

Crucial Technology CT4G4SFS8266.M8FE 4GB

Kingston ACR256X64D3S1333C9 2GB

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Kingston XJV223-MIE-NX 16GB

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Kingston 9905403-038.A00LF 4GB

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SK Hynix HMAA4GU6MJR8N-VK 32GB

SK Hynix HMAA4GU6MJR8N-VK 32GB