Corsair VSA2GSDS667C4 2GB vs InnoDisk Corporation M4S0-4GSSNCIK 4GB

总分

Corsair VSA2GSDS667C4 2GB

Corsair VSA2GSDS667C4 2GB

总分

InnoDisk Corporation M4S0-4GSSNCIK 4GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB

差异规格评论

差异

Corsair VSA2GSDS667C4 2GB

需要考虑的原因
Corsair VSA2GSDS667C4 2GB

报告一个错误

低于PassMark测试中的延时，ns

51 85

左右 40% 更低的延时
更快的读取速度，GB/s

4 11.3

测试中的平均数值

InnoDisk Corporation M4S0-4GSSNCIK 4GB

需要考虑的原因
InnoDisk Corporation M4S0-4GSSNCIK 4GB

报告一个错误

更快的写入速度，GB/s

6.0 1,839.1

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Corsair VSA2GSDS667C4 2GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

51 85
读取速度，GB/s

4,246.9 11.3
写入速度，GB/s

1,839.1 6.0
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 4 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

721 1118

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT351R7EFR8C-RD 4GB

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Corsair CMK16GX4M2E3200C16 8GB

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Kingston 99U5474-037.A00LF 4GB

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Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

G Skill Intl F4-2400C16-8GFT 8GB

G Skill Intl F4-2400C16-8GFT 8GB