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Corsair VSA2GSDS667C4 2GB
Kingston ACR32D4U2S1ME-8 8GB

Corsair VSA2GSDS667C4 2GB vs Kingston ACR32D4U2S1ME-8 8GB

总分
star star star star star
Corsair VSA2GSDS667C4 2GB

Corsair VSA2GSDS667C4 2GB

总分
star star star star star
Kingston ACR32D4U2S1ME-8 8GB

Kingston ACR32D4U2S1ME-8 8GB

差异 规格 评论

差异

Corsair VSA2GSDS667C4 2GB 需要考虑的原因
Corsair VSA2GSDS667C4 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 17.4
    测试中的平均数值
Kingston ACR32D4U2S1ME-8 8GB 需要考虑的原因
Kingston ACR32D4U2S1ME-8 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 51
    左右 -42% 更低的延时
  • 更快的写入速度，GB/s
    11.5 left arrow 1,839.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 5300
    左右 4.83 更高的带宽

规格

完整的技术规格清单
Corsair VSA2GSDS667C4 2GB
Kingston ACR32D4U2S1ME-8 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 36
  • 读取速度，GB/s
    4,246.9 left arrow 17.4
  • 写入速度，GB/s
    1,839.1 left arrow 11.5
  • 内存带宽，mbps
    5300 left arrow 25600
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 4 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    721 left arrow 2876

Corsair VSA2GSDS667C4 2GB RAM的比较

SK Hynix HYMP112S64CP6-S6 1GB
Gloway International (HK) STK4U2400D17161C 16GB

Kingston ACR32D4U2S1ME-8 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
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Crucial Technology BLT8G4D30BET4K.C8FD 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
内存RAM
Corsair VSA2GSDS667C4 2GB
Corsair VSA2GSDS667C4 2GB
Kingston ACR32D4U2S1ME-8 8GB
Kingston ACR32D4U2S1ME-8 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Transcend Information TS512MLH64V1H 4GB
Transcend Information TS512MLH64V1H 4GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Corsair CM4X16GE2933C19S2 16MB
Corsair CM4X16GE2933C19S2 16MB
内存RAM
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Crucial Technology CT16G4SFS832A.C8FE 16GB
Crucial Technology CT16G4SFS832A.C8FE 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
King Tiger Technology TMKU8G868-240U 8GB
King Tiger Technology TMKU8G868-240U 8GB
内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2800C15-8GVSB 8GB
G Skill Intl F4-2800C15-8GVSB 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Patriot Memory (PDP Systems) 3000 C16 Series 4GB
Patriot Memory (PDP Systems) 3000 C16 Series 4GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology CT8G4SFRA266.M8FRS 8GB
Crucial Technology CT8G4SFRA266.M8FRS 8GB
内存RAM
OCZ OCZ2P11502G 2GB
OCZ OCZ2P11502G 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125U64CP8-S6 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125U64CP8
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Corsair CMR64GX4M8C3200C16 8GB
Corsair CMR64GX4M8C3200C16 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Kingston ACR32D4U2S8ME-16 16GB
Kingston ACR32D4U2S8ME-16 16GB
内存RAM