OCZ OCZ2P11502G 2GB vs Hynix Semiconductor (Hyundai Electronics) HYMP125U64CP8-S6 2GB

总分

OCZ OCZ2P11502G 2GB

OCZ OCZ2P11502G 2GB

总分

Hynix Semiconductor (Hyundai Electronics) HYMP125U64CP8-S6 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125U64CP8-S6 2GB

差异规格评论

差异

OCZ OCZ2P11502G 2GB

需要考虑的原因
OCZ OCZ2P11502G 2GB

报告一个错误

更快的读取速度，GB/s

5 4

测试中的平均数值
更快的写入速度，GB/s

3,658.9 2,169.5

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HYMP125U64CP8-S6 2GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125U64CP8-S6 2GB

报告一个错误

低于PassMark测试中的延时，ns

56 66

左右 -18% 更低的延时

规格

完整的技术规格清单

OCZ OCZ2P11502G 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125U64CP8-S6 2GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

66 56
读取速度，GB/s

5,201.6 4,680.1
写入速度，GB/s

3,658.9 2,169.5
内存带宽，mbps

6400 6400

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
时序/时钟速度

5-5-5-15 / 800 MHz 5-5-5-15 / 800 MHz
排名PassMark (越多越好)

860 779

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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