Crucial Technology BLE4G3D1608DE1TX0. 4GB vs Crucial Technology CB8GS2400.C8D 8GB

总分

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

总分

Crucial Technology CB8GS2400.C8D 8GB

Crucial Technology CB8GS2400.C8D 8GB

差异规格评论

差异

Crucial Technology BLE4G3D1608DE1TX0. 4GB

需要考虑的原因
Crucial Technology BLE4G3D1608DE1TX0. 4GB

报告一个错误

低于PassMark测试中的延时，ns

34 89

左右 62% 更低的延时
更快的读取速度，GB/s

16.2 13.6

测试中的平均数值
更快的写入速度，GB/s

9.7 6.8

测试中的平均数值

Crucial Technology CB8GS2400.C8D 8GB

需要考虑的原因
Crucial Technology CB8GS2400.C8D 8GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology CB8GS2400.C8D 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

34 89
读取速度，GB/s

16.2 13.6
写入速度，GB/s

9.7 6.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2636 1518

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M47472K43DB1-CTD 16GB

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A-DATA Technology DOVF1B163G2G 2GB

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Apacer Technology GD2.11173T.001 4GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Micron Technology ILG8GS2400A 8GB

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Corsair CM4X4GF3000C15K4 4GB

Corsair CM4X4GF3000C15K4 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Crucial Technology CT16G4DFRA266.C8FB 16GB

Crucial Technology CT16G4DFRA266.C8FB 16GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

Crucial Technology BLS4G4D240FSA.8FADG 4GB

Crucial Technology BLS4G4D240FSA.8FADG 4GB