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Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Apacer Technology 78.C1GM3.C7Z0B 8GB

Crucial Technology BLS4G4D240FSE.M8FADM 4GB vs Apacer Technology 78.C1GM3.C7Z0B 8GB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.M8FADM 4GB

Crucial Technology BLS4G4D240FSE.M8FADM 4GB

总分
star star star star star
Apacer Technology 78.C1GM3.C7Z0B 8GB

Apacer Technology 78.C1GM3.C7Z0B 8GB

差异 规格 评论

差异

Crucial Technology BLS4G4D240FSE.M8FADM 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 25
    左右 4% 更低的延时
  • 更快的读取速度，GB/s
    15.5 left arrow 13
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.0 left arrow 6.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13% 更高的带宽
Apacer Technology 78.C1GM3.C7Z0B 8GB 需要考虑的原因
Apacer Technology 78.C1GM3.C7Z0B 8GB
报告一个错误

规格

完整的技术规格清单
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Apacer Technology 78.C1GM3.C7Z0B 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 25
  • 读取速度，GB/s
    15.5 left arrow 13.0
  • 写入速度，GB/s
    11.0 left arrow 6.5
  • 内存带宽，mbps
    19200 left arrow 17000
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2445 left arrow 2041

Crucial Technology BLS4G4D240FSE.M8FADM 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Apacer Technology 78.C1GM3.C7Z0B 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Apacer Technology 78.C1GM3.C7Z0B 8GB
Apacer Technology 78.C1GM3.C7Z0B 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Patriot Memory (PDP Systems) PSD44G266681 4GB
Patriot Memory (PDP Systems) PSD44G266681 4GB
内存RAM
SK Hynix HYMP125S64CP8-S6 2GB
SK Hynix HYMP125S64CP8-S6 2GB
G Skill Intl F4-3000C16-16GTZN 16GB
G Skill Intl F4-3000C16-16GTZN 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Corsair CM4X16GC3000C16K4D 16GB
Corsair CM4X16GC3000C16K4D 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMSO8GX4M1A2133C15 8GB
Corsair CMSO8GX4M1A2133C15 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Kingmax Semiconductor GSLF62F-D8---------- 4GB
Kingmax Semiconductor GSLF62F-D8---------- 4GB
内存RAM
Ramaxel Technology RMT3170EB68F9W1600 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Samsung M378A1K43BB2-CTD 8GB
Samsung M378A1K43BB2-CTD 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology BL8G30C15U4B.M8FE 8GB
Crucial Technology BL8G30C15U4B.M8FE 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Samsung M393A1G43DB0-CPB 8GB
Samsung M393A1G43DB0-CPB 8GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
G Skill Intl F4-2400C17-8GSXW 8GB
G Skill Intl F4-2400C17-8GSXW 8GB
内存RAM
Kingston 99U5428-018.A00LF 8GB
Kingston 99U5428-018.A00LF 8GB
Avant Technology W6451U66J7240ND 4GB
Avant Technology W6451U66J7240ND 4GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMT32GX4M2K4000C19 16GB
Corsair CMT32GX4M2K4000C19 16GB
内存RAM