Crucial Technology CT51264BD1339.M16F 4GB vs Corsair CM4X4GF2666Z16K4 4GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

Corsair CM4X4GF2666Z16K4 4GB

Corsair CM4X4GF2666Z16K4 4GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 46

左右 46% 更低的延时
更快的读取速度，GB/s

12.1 11.4

测试中的平均数值

Corsair CM4X4GF2666Z16K4 4GB

需要考虑的原因
Corsair CM4X4GF2666Z16K4 4GB

报告一个错误

更快的写入速度，GB/s

12.3 8.6

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

Corsair CM4X4GF2666Z16K4 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 46
读取速度，GB/s

12.1 11.4
写入速度，GB/s

8.6 12.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2045 2541

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HYMP112S64CP6-S6 1GB

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Corsair CMK32GX4M2D3600C18 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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G Skill Intl F4-4000C18-8GTZR 8GB