Crucial Technology CT51264BD1339.M16F 4GB vs Kingston KHX2400C14D4/16G 16GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

Kingston KHX2400C14D4/16G 16GB

Kingston KHX2400C14D4/16G 16GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 32

左右 22% 更低的延时

Kingston KHX2400C14D4/16G 16GB

需要考虑的原因
Kingston KHX2400C14D4/16G 16GB

报告一个错误

更快的读取速度，GB/s

15.2 12.1

测试中的平均数值
更快的写入速度，GB/s

10.5 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

Kingston KHX2400C14D4/16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 32
读取速度，GB/s

12.1 15.2
写入速度，GB/s

8.6 10.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2045 2835

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMT325U6CFR8C-PB 2GB

Kingston 9905703-011.A00G 16GB

Kingston 9905703-011.A00G 16GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Kingston KHX2133C13S4/16G 16GB

Kingston KHX2133C13S4/16G 16GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Crucial Technology CT8G4DFD8213.C16FDR2 8GB

Crucial Technology CT8G4DFD8213.C16FDR2 8GB

Nanya Technology M2X4G64CB88CHN-DG 4GB

Nanya Technology M2X4G64CB88CHN-DG 4GB

Panram International Corporation W4U2400PS-8G 8GB

Panram International Corporation W4U2400PS-8G 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

Samsung M378A2G43AB3-CWE 16GB

Samsung M378A2G43AB3-CWE 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Corsair CMR128GX4M8X3800C19 16GB

Corsair CMR128GX4M8X3800C19 16GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

Transcend Information TS512MSH64V4H 4GB

Transcend Information TS512MSH64V4H 4GB

A-DATA Technology AD5U48008G-B 8GB

A-DATA Technology AD5U48008G-B 8GB

V-Color Technology Inc. TD8G16C16-UHK 8GB

V-Color Technology Inc. TD8G16C16-UHK 8GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Crucial Technology BL8G32C16U4W.8FE 8GB

Crucial Technology BL8G32C16U4W.8FE 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-3600C16-8GTZSW 8GB

G Skill Intl F4-3600C16-8GTZSW 8GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Kingston 9932291-002.A00G 4GB

Kingston 9932291-002.A00G 4GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Apacer Technology 78.CAGP7.4020B 8GB

Apacer Technology 78.CAGP7.4020B 8GB