Crucial Technology CT8G4SFD8213.C16FADP 8GB vs Samsung M471A1K43EB1-CWE 8GB

总分

Crucial Technology CT8G4SFD8213.C16FADP 8GB

Crucial Technology CT8G4SFD8213.C16FADP 8GB

总分

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

差异规格评论

差异

Crucial Technology CT8G4SFD8213.C16FADP 8GB

需要考虑的原因
Crucial Technology CT8G4SFD8213.C16FADP 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 46

左右 37% 更低的延时

Samsung M471A1K43EB1-CWE 8GB

需要考虑的原因
Samsung M471A1K43EB1-CWE 8GB

报告一个错误

更快的读取速度，GB/s

16 13.1

测试中的平均数值
更快的写入速度，GB/s

12.4 9.6

测试中的平均数值
更高的内存带宽，mbps

25600 17000

左右 1.51 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT8G4SFD8213.C16FADP 8GB

Samsung M471A1K43EB1-CWE 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 46
读取速度，GB/s

13.1 16.0
写入速度，GB/s

9.6 12.4
内存带宽，mbps

17000 25600

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2243 2660

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

A-DATA Technology AE4S240038G17-BHYA 8GB

A-DATA Technology AE4S240038G17-BHYA 8GB

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Kingston 9905403-444.A00LF 4GB

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Samsung M471A1G44BB0-CWE 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Kingston KV1RX3-HYC 2GB

Kingston KV1RX3-HYC 2GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Corsair CMWX8GD3000C16W4D 8GB

Corsair CMWX8GD3000C16W4D 8GB