G Skill Intl F2-8500CL5-2GBPI 2GB vs Samsung V-GeN D4S16GL32A8TS 16GB

总分

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

总分

Samsung V-GeN D4S16GL32A8TS 16GB

Samsung V-GeN D4S16GL32A8TS 16GB

差异规格评论

差异

G Skill Intl F2-8500CL5-2GBPI 2GB

需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB

报告一个错误

低于PassMark测试中的延时，ns

45 57

左右 21% 更低的延时
更快的读取速度，GB/s

6 19.1

测试中的平均数值
更快的写入速度，GB/s

2,935.8 10.1

测试中的平均数值

Samsung V-GeN D4S16GL32A8TS 16GB

需要考虑的原因
Samsung V-GeN D4S16GL32A8TS 16GB

报告一个错误

更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-8500CL5-2GBPI 2GB

Samsung V-GeN D4S16GL32A8TS 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

45 57
读取速度，GB/s

6,336.8 19.1
写入速度，GB/s

2,935.8 10.1
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1144 2377

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-4000C17-8GTZRB 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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SK Hynix HMA425S6AFR6N-UH 2GB

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SK Hynix HMT41GU7BFR8A-PB 8GB

Crucial Technology CT16G4SFD824A.C16FBD 16GB

Crucial Technology CT16G4SFD824A.C16FBD 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16

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Samsung M471B5673FH0-CF8 2GB

Corsair CMSX64GX4M2A2666C18 32GB

Corsair CMSX64GX4M2A2666C18 32GB