G Skill Intl F3-1333C9-4GIS 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

G Skill Intl F3-1333C9-4GIS 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

总分

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

差异规格评论

差异

G Skill Intl F3-1333C9-4GIS 4GB

需要考虑的原因
G Skill Intl F3-1333C9-4GIS 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 32

左右 13% 更低的延时
更快的读取速度，GB/s

12.4 11.3

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

报告一个错误

更快的写入速度，GB/s

7.6 7.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-1333C9-4GIS 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 32
读取速度，GB/s

12.4 11.3
写入速度，GB/s

7.5 7.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2014 2292

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378B5273DH0-CH9 4GB

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G Skill Intl F4-2400C16-16GFX 16GB

G Skill Intl F4-2400C16-16GFX 16GB

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G Skill Intl F4-2400C15Z8GNT 8GB

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Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

G Skill Intl F4-3600C16-16GTZRC 16GB

G Skill Intl F4-3600C16-16GTZRC 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

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