G Skill Intl F3-1866C8-8GTX 8GB vs Mushkin MR[A/B]4U300JJJM16G 16GB

总分

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

总分

Mushkin MR[A/B]4U300JJJM16G 16GB

Mushkin MR[A/B]4U300JJJM16G 16GB

差异规格评论

差异

G Skill Intl F3-1866C8-8GTX 8GB

需要考虑的原因
G Skill Intl F3-1866C8-8GTX 8GB

报告一个错误

Mushkin MR[A/B]4U300JJJM16G 16GB

需要考虑的原因
Mushkin MR[A/B]4U300JJJM16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 -15% 更低的延时
更快的读取速度，GB/s

17.3 16.8

测试中的平均数值
更快的写入速度，GB/s

14.5 10.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-1866C8-8GTX 8GB

Mushkin MR[A/B]4U300JJJM16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 27
读取速度，GB/s

16.8 17.3
写入速度，GB/s

10.8 14.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2904 3528

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C15-8GVK 8GB

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Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

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Micron Technology 4KTF25664HZ-1G6E1 2GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Micron Technology 8ATF2G64HZ-2G3A1 16GB

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SK Hynix HMT41GU7MFR8A-H9 8GB

I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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G Skill Intl F4-4400C17-8GVK 8GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

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Corsair CMK16GX4M4B3866C18 4GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Corsair CMU16GX4M2C3200C16 8GB

Corsair CMU16GX4M2C3200C16 8GB