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G Skill Intl F3-2800C12-8GTXDG 8GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

G Skill Intl F3-2800C12-8GTXDG 8GB vs Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

总分
star star star star star
G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

总分
star star star star star
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB

差异 规格 评论

差异

G Skill Intl F3-2800C12-8GTXDG 8GB 需要考虑的原因
G Skill Intl F3-2800C12-8GTXDG 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 32
    左右 34% 更低的延时
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB 需要考虑的原因
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
报告一个错误
  • 更快的读取速度，GB/s
    19.4 left arrow 17.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.3 left arrow 12.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-2800C12-8GTXDG 8GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    21 left arrow 32
  • 读取速度，GB/s
    17.4 left arrow 19.4
  • 写入速度，GB/s
    12.2 left arrow 16.3
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3130 left arrow 3726

G Skill Intl F3-2800C12-8GTXDG 8GB RAM的比较

Corsair CMY32GX3M4B2666C11 8GB
Kingston 9905734-102.A00G 32GB

Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
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内存RAM
Samsung M378A2K43EB1-CWE 16GB
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Samsung M378A2G43AB3-CWE 16GB
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Kingston KTC1G-UDIMM 1GB
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Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
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Samsung V-GeN D4S8GL32A8TL 8GB
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Hexon Technology Pte Ltd HEXON 1GB
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AMD AE34G1601U1 4GB
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V-GEN D4H4GL30A8TS5 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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G Skill Intl F4-3600C18-16GTRS 16GB
内存RAM
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Crucial Technology CT51264BF160BJ.M8F 4GB
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Crucial Technology CT16G4SFD8266.M16FRS 16GB
内存RAM
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Samsung M393B1G70BH0-CK0 8GB
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Crucial Technology CT4G4SFS824A.C8FBR2 4GB
内存RAM
Kingston 9905403-515.A00LF 8GB
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内存RAM
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内存RAM
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Samsung M393A1G40DB0-CPB 8GB
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内存RAM
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AMD R9S48G3206U2S 8GB
内存RAM