G Skill Intl F3-2800C12-8GTXDG 8GB vs Kingston KYXC0V-MIB 16GB

总分

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

总分

Kingston KYXC0V-MIB 16GB

Kingston KYXC0V-MIB 16GB

差异规格评论

差异

G Skill Intl F3-2800C12-8GTXDG 8GB

需要考虑的原因
G Skill Intl F3-2800C12-8GTXDG 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 34

左右 38% 更低的延时
更快的读取速度，GB/s

17.4 14.8

测试中的平均数值
更快的写入速度，GB/s

12.2 9.9

测试中的平均数值

Kingston KYXC0V-MIB 16GB

需要考虑的原因
Kingston KYXC0V-MIB 16GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2800C12-8GTXDG 8GB

Kingston KYXC0V-MIB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

21 34
读取速度，GB/s

17.4 14.8
写入速度，GB/s

12.2 9.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3130 2739

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Netac Technology Co Ltd E40832A 8GB

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G Skill Intl F3-2800C12-8GTXDG 8GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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Samsung M4 70T5663QH3-CF7 2GB

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Elpida EBE21UE8ACUA-8G-E 2GB

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Kingmax Semiconductor GLLF62F-D8---------- 4GB

Kingmax Semiconductor GLLF62F-D8---------- 4GB

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Kingston 9905403-011.A03LF 2GB

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G Skill Intl F4-2400C15-16GFX 16GB

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

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Hexon Technology Pte Ltd HEXON 1GB

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Transcend Information TS1GLH64V4H 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Wilk Elektronik S.A. W-MEM2666S416G 16GB

Wilk Elektronik S.A. W-MEM2666S416G 16GB