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G Skill Intl F5-6400J3239G16G 16GB
Samsung M471A2K43EB1-CWE 16GB

G Skill Intl F5-6400J3239G16G 16GB vs Samsung M471A2K43EB1-CWE 16GB

总分
star star star star star
G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

总分
star star star star star
Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

差异 规格 评论

差异

G Skill Intl F5-6400J3239G16G 16GB 需要考虑的原因
G Skill Intl F5-6400J3239G16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 55
    左右 53% 更低的延时
  • 更快的读取速度，GB/s
    17.8 left arrow 15.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.7 left arrow 13.8
    测试中的平均数值
Samsung M471A2K43EB1-CWE 16GB 需要考虑的原因
Samsung M471A2K43EB1-CWE 16GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33 更高的带宽

规格

完整的技术规格清单
G Skill Intl F5-6400J3239G16G 16GB
Samsung M471A2K43EB1-CWE 16GB
主要特点
  • 存储器类型
    DDR5 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 55
  • 读取速度，GB/s
    17.8 left arrow 15.8
  • 写入速度，GB/s
    15.7 left arrow 13.8
  • 内存带宽，mbps
    19200 left arrow 25600
Other
  • 描述
    PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    no data / 2400 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    3867 left arrow 2701

G Skill Intl F5-6400J3239G16G 16GB RAM的比较

Corsair CMK16GX4M2K4266C16 8GB
Kingston 9905783-025.A01G 16GB

Samsung M471A2K43EB1-CWE 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B5170FH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
G Skill Intl F4-3200C15-16GTZ 16GB
G Skill Intl F4-3200C15-16GTZ 16GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Samsung M471A2K43EB1-CWE 16GB
Samsung M471A2K43EB1-CWE 16GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
SK Hynix HMA851S6JJR6N-VK 4GB
SK Hynix HMA851S6JJR6N-VK 4GB
内存RAM
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
G Skill Intl F4-3200C14-16GTZN 16GB
G Skill Intl F4-3200C14-16GTZN 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Samsung M386A4G40DM1-CRC 32GB
Samsung M386A4G40DM1-CRC 32GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F4-4266C19-4GTZ 4GB
G Skill Intl F4-4266C19-4GTZ 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4SFS8266.C8FB 16GB
Crucial Technology CT16G4SFS8266.C8FB 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Micron Technology 4ATF1G64AZ-3G2E1 8GB
Micron Technology 4ATF1G64AZ-3G2E1 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA42GR7MFR4N-TFTD 16GB
SK Hynix HMA42GR7MFR4N-TFTD 16GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Apacer Technology 78.C1GMM.AUF0B 8GB
Apacer Technology 78.C1GMM.AUF0B 8GB
内存RAM
Kingmax Semiconductor FLFF65F-C8KM9 4GB
Kingmax Semiconductor FLFF65F-C8KM9 4GB
Apacer Technology 78.CAGP7.C7C0B 8GB
Apacer Technology 78.CAGP7.C7C0B 8GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Kingmax Semiconductor GLMH23F-18MCIA------ 16GB
Kingmax Semiconductor GLMH23F-18MCIA------ 16GB
内存RAM