Hexon Technology Pte Ltd HEXON 1GB vs Crucial Technology CT8G4SFD8213.C16FADP 8GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Crucial Technology CT8G4SFD8213.C16FADP 8GB

Crucial Technology CT8G4SFD8213.C16FADP 8GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 13.1

测试中的平均数值

Crucial Technology CT8G4SFD8213.C16FADP 8GB

需要考虑的原因
Crucial Technology CT8G4SFD8213.C16FADP 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 62

左右 -114% 更低的延时
更快的写入速度，GB/s

9.6 1,843.6

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology CT8G4SFD8213.C16FADP 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 29
读取速度，GB/s

3,556.6 13.1
写入速度，GB/s

1,843.6 9.6
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

542 2243

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Kingston MSI24D4D4S8MB-8 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Kingston 99U5702-020.A00G 8GB

Kingston 99U5702-020.A00G 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Samsung M471A1A43CB1-CRC 8GB

Samsung M471A1A43CB1-CRC 8GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Crucial Technology BLS8G4D30AESEK.M8FE 8GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

SK Hynix HMA81GS6AFR8N-VK 8GB

SK Hynix HMA81GS6AFR8N-VK 8GB