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Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB vs Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
总分
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
报告一个错误
低于PassMark测试中的延时,ns
26
28
左右 7% 更低的延时
更高的内存带宽,mbps
21300
17000
左右 1.25% 更高的带宽
需要考虑的原因
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
报告一个错误
更快的读取速度,GB/s
18.5
16.8
测试中的平均数值
更快的写入速度,GB/s
15.7
13.5
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
26
28
读取速度,GB/s
16.8
18.5
写入速度,GB/s
13.5
15.7
内存带宽,mbps
21300
17000
Other
描述
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2880
3601
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB RAM的比较
Kingston KN2M64-ETB 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Crucial Technology CT25664BA160B.C16F 2GB
Corsair CMT32GX4M2C3600C18 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 4ATF51264HZ-2G3E2 4GB
AMD AE34G2139U2 4GB
Kingston KTP9W1-MIE 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT16G4DFD824A.C16FHD 16GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology CT16G4DFRA32A.M16FR 16GB
Samsung M378B5673EH1-CF8 2GB
Shenzhen Technology Co Ltd 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Micron Technology 18ADF2G72AZ-2G3B1 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Micron Technology HMA81GU6AFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M471A5143EB0-CPB 4GB
SK Hynix HMT351S6BFR8C-H9 4GB
Avant Technology W6451U67J5213NB 4GB
报告一个错误
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