Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB vs Samsung M471B5674QH0-YK0 2GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

总分

Samsung M471B5674QH0-YK0 2GB

Samsung M471B5674QH0-YK0 2GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 38

左右 18% 更低的延时
更快的读取速度，GB/s

11.2 7.2

测试中的平均数值
更快的写入速度，GB/s

7.6 3.0

测试中的平均数值

Samsung M471B5674QH0-YK0 2GB

需要考虑的原因
Samsung M471B5674QH0-YK0 2GB

报告一个错误

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

Samsung M471B5674QH0-YK0 2GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

31 38
读取速度，GB/s

11.2 7.2
写入速度，GB/s

7.6 3.0
内存带宽，mbps

12800 12800

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2026 915

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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