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NXP (Philips) HMT351S6CFR8C-H9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

NXP (Philips) HMT351S6CFR8C-H9 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

总分
star star star star star
NXP (Philips) HMT351S6CFR8C-H9 4GB

NXP (Philips) HMT351S6CFR8C-H9 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

差异 规格 评论

差异

NXP (Philips) HMT351S6CFR8C-H9 4GB 需要考虑的原因
NXP (Philips) HMT351S6CFR8C-H9 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 31
    左右 6% 更低的延时
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB
报告一个错误
  • 更快的读取速度，GB/s
    11.2 left arrow 8
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.6 left arrow 4.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21 更高的带宽

规格

完整的技术规格清单
NXP (Philips) HMT351S6CFR8C-H9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    29 left arrow 31
  • 读取速度，GB/s
    8.0 left arrow 11.2
  • 写入速度，GB/s
    4.4 left arrow 7.6
  • 内存带宽，mbps
    10600 left arrow 12800
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 4 6 8 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1286 left arrow 2026

NXP (Philips) HMT351S6CFR8C-H9 4GB RAM的比较

Kingston ACR256X64D3S1333C9 2GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB RAM的比较

SK Hynix HMT451S6BFR8A-PB 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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