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Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB
Ramos Technology RMB4GB584CA3-13HC 4GB

Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB vs Ramos Technology RMB4GB584CA3-13HC 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB

Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB

总分
star star star star star
Ramos Technology RMB4GB584CA3-13HC 4GB

Ramos Technology RMB4GB584CA3-13HC 4GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 66
    左右 64% 更低的延时
  • 更快的读取速度，GB/s
    15.5 left arrow 6.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.8 left arrow 3.8
    测试中的平均数值
Ramos Technology RMB4GB584CA3-13HC 4GB 需要考虑的原因
Ramos Technology RMB4GB584CA3-13HC 4GB
报告一个错误

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB
Ramos Technology RMB4GB584CA3-13HC 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    24 left arrow 66
  • 读取速度，GB/s
    15.5 left arrow 6.6
  • 写入速度，GB/s
    8.8 left arrow 3.8
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2444 left arrow 1055

Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB RAM的比较

Patriot Memory (PDP Systems) PSD34G133381 4GB
AMD AE34G1339U2 4GB

Ramos Technology RMB4GB584CA3-13HC 4GB RAM的比较

AMD R5316G1609U2K 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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