RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Apacer Technology 78.BAGSR.4030B 4GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Apacer Technology 78.BAGSR.4030B 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

总分
star star star star star
Apacer Technology 78.BAGSR.4030B 4GB

Apacer Technology 78.BAGSR.4030B 4GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    65 left arrow 73
    左右 11% 更低的延时
  • 更快的读取速度，GB/s
    3 left arrow 14.5
    测试中的平均数值
Apacer Technology 78.BAGSR.4030B 4GB 需要考虑的原因
Apacer Technology 78.BAGSR.4030B 4GB
报告一个错误
  • 更快的写入速度，GB/s
    7.7 left arrow 1,592.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Apacer Technology 78.BAGSR.4030B 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 73
  • 读取速度，GB/s
    3,580.8 left arrow 14.5
  • 写入速度，GB/s
    1,592.0 left arrow 7.7
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    572 left arrow 1700

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB RAM的比较

Samsung M471B5773DH0-CK0 2GB
Kingston 99U5295-011.A00LF 2GB

Apacer Technology 78.BAGSR.4030B 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CMD16GX3M4A2666C11 4GB
Corsair CMD16GX3M4A2666C11 4GB
Kingston KHYXPX-HYJ 8GB
Kingston KHYXPX-HYJ 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Patriot Memory (PDP Systems) PSD44G266681 4GB
Patriot Memory (PDP Systems) PSD44G266681 4GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
V-GEN D4H4GL26A8TS5 4GB
V-GEN D4H4GL26A8TS5 4GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
G Skill Intl F4-2800C15-8GTZB 8GB
G Skill Intl F4-2800C15-8GTZB 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Samsung M386A4K40BB0-CRC 32GB
Samsung M386A4K40BB0-CRC 32GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Kingston X0N6VG-HYD2 16GB
Kingston X0N6VG-HYD2 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Apacer Technology 78.BAGSR.4030B 4GB
Apacer Technology 78.BAGSR.4030B 4GB
内存RAM
Apacer Technology AQD-D4U8GN24-SE 8GB
Apacer Technology AQD-D4U8GN24-SE 8GB
Cortus SAS 8ATF51264AZ-2G1A1 4GB
Cortus SAS 8ATF51264AZ-2G1A1 4GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Micron Technology 16ATF4G64HZ-2G6B2 32GB
Micron Technology 16ATF4G64HZ-2G6B2 32GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston XRGM6C-MIE 16GB
Kingston XRGM6C-MIE 16GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
V-GEN D4H16GS24A8 16GB
V-GEN D4H16GS24A8 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT8G4SFS824A.M8FJ 8GB
Crucial Technology CT8G4SFS824A.M8FJ 8GB
内存RAM
G Skill Intl F3-17000CL11-4GBXL 4GB
G Skill Intl F3-17000CL11-4GBXL 4GB
Crucial Technology CT8G4SFS824A.C8FE 8GB
Crucial Technology CT8G4SFS824A.C8FE 8GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
AMD R7S44G2606U1S 4GB
AMD R7S44G2606U1S 4GB
内存RAM