Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

总分

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

报告一个错误

更快的读取速度，GB/s

3 16.6

测试中的平均数值

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

报告一个错误

低于PassMark测试中的延时，ns

63 65

左右 -3% 更低的延时
更快的写入速度，GB/s

8.2 1,592.0

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 63
读取速度，GB/s

3,580.8 16.6
写入速度，GB/s

1,592.0 8.2
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

572 1863

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M393B1G70BH0-CK0 8GB

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Crucial Technology BL8G36C16U4R.M8FE1 8GB

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A-DATA Technology DDR4 3600 8GB

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G Skill Intl F4-2133C15-4GVK 4GB

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AMD R538G1601U2S 8GB

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PUSKILL DDR3 1600 8G 8GB

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G Skill Intl F4-3200C14-32GTRG 32GB

G Skill Intl F4-3200C14-32GTRG 32GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F4-4400C17-16GVK 16GB

G Skill Intl F4-4400C17-16GVK 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

A-DATA Technology DDR4 3600 2OZ 8GB

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Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Crucial Technology CT16G4DFD824A.C16FAD 16GB

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Kingston 9905702-027.A00G 8GB

Kingston 9905702-027.A00G 8GB

Kingston XF875V-MIH 8GB

Kingston XF875V-MIH 8GB

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

Corsair CMK128GX4M8A2133C13 16GB

Corsair CMK128GX4M8A2133C13 16GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Transcend Information JM3200HLG-8G 8GB

Transcend Information JM3200HLG-8G 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Dust Leopard DDR4-2400 C17 8GB 8GB

Dust Leopard DDR4-2400 C17 8GB 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Samsung M471A1G43EB1-CRC 8GB

Samsung M471A1G43EB1-CRC 8GB