Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Kingston KHX2133C14S4/8G 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

总分

Kingston KHX2133C14S4/8G 8GB

Kingston KHX2133C14S4/8G 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

报告一个错误

更快的读取速度，GB/s

3 16.1

测试中的平均数值

Kingston KHX2133C14S4/8G 8GB

需要考虑的原因
Kingston KHX2133C14S4/8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 65

左右 -150% 更低的延时
更快的写入速度，GB/s

11.8 1,592.0

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Kingston KHX2133C14S4/8G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 26
读取速度，GB/s

3,580.8 16.1
写入速度，GB/s

1,592.0 11.8
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

572 2739

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Crucial Technology CT16G4DFD8266.C16FD1 16GB

Crucial Technology CT16G4DFD8266.C16FD1 16GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Essencore Limited KD48GU880-36A180Z 8GB

Essencore Limited KD48GU880-36A180Z 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

A-DATA Technology AO2P24HCST2-BTCS 16GB

A-DATA Technology AO2P24HCST2-BTCS 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Solarflare Communications CT16G4DFD824A.C16FBR 16GB

Solarflare Communications CT16G4DFD824A.C16FBR 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378A1K43DB2-CTD 8GB

Samsung M378A1K43DB2-CTD 8GB

Kingston 9905702-010.A00G 8GB

Kingston 9905702-010.A00G 8GB

Apacer Technology 78.CAGP7.C7Z0B 8GB

Apacer Technology 78.CAGP7.C7Z0B 8GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Gold Key Technology Co Ltd NMUD480E86-3200 8GB

Gold Key Technology Co Ltd NMUD480E86-3200 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Crucial Technology CT8G4SFS8266.M8FE 8GB

Crucial Technology CT8G4SFS8266.M8FE 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Micron Technology 8ATF1G64AZ-2G3B1 8GB

Micron Technology 8ATF1G64AZ-2G3B1 8GB

Corsair CM4X16GC3000C16K4D 16GB

Corsair CM4X16GC3000C16K4D 16GB

Corsair CMK32GX4M4K4133C19 8GB

Corsair CMK32GX4M4K4133C19 8GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

Crucial Technology BLS8G4D240FSE.16FAR 8GB

Crucial Technology BLS8G4D240FSE.16FAR 8GB

Nanya Technology M2Y51264TU88A2B-3C 512MB

Nanya Technology M2Y51264TU88A2B-3C 512MB

G Skill Intl F4-4000C18-8GTZKW 8GB

G Skill Intl F4-4000C18-8GTZKW 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Wilk Elektronik S.A. GY2666D464L16/8G 8GB

Wilk Elektronik S.A. GY2666D464L16/8G 8GB