RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Hynix Semiconductor (Hyundai Electronics) HYMP125U72CP8-Y5 2GB
Nanya Technology NT1GT64U88D0BY-AD 1GB

Hynix Semiconductor (Hyundai Electronics) HYMP125U72CP8-Y5 2GB vs Nanya Technology NT1GT64U88D0BY-AD 1GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HYMP125U72CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125U72CP8-Y5 2GB

总分
star star star star star
Nanya Technology NT1GT64U88D0BY-AD 1GB

Nanya Technology NT1GT64U88D0BY-AD 1GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HYMP125U72CP8-Y5 2GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP125U72CP8-Y5 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    49 left arrow 68
    左右 28% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 4
    测试中的平均数值
Nanya Technology NT1GT64U88D0BY-AD 1GB 需要考虑的原因
Nanya Technology NT1GT64U88D0BY-AD 1GB
报告一个错误
  • 更快的写入速度，GB/s
    2,636.8 left arrow 2,120.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    6400 left arrow 5300
    左右 1.21 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HYMP125U72CP8-Y5 2GB
Nanya Technology NT1GT64U88D0BY-AD 1GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR2
  • PassMark中的延时，ns
    49 left arrow 68
  • 读取速度，GB/s
    4,879.6 left arrow 4,540.8
  • 写入速度，GB/s
    2,120.4 left arrow 2,636.8
  • 内存带宽，mbps
    5300 left arrow 6400
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 5-5-5-15 / 800 MHz
  • 排名PassMark (越多越好)
    840 left arrow 827

Hynix Semiconductor (Hyundai Electronics) HYMP125U72CP8-Y5 2GB RAM的比较

G Skill Intl F4-3200C16-16GSXFB 16GB

Nanya Technology NT1GT64U88D0BY-AD 1GB RAM的比较

SK Hynix HYMP125U72CP8-Y5 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Team Group Inc. TEAMGROUP-UD4-2933 8GB
Team Group Inc. TEAMGROUP-UD4-2933 8GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BL32G36C16U4BL.M16FB 32GB
Crucial Technology BL32G36C16U4BL.M16FB 32GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Gloway International Co. Ltd. TYA4U2400D17081C 8GB
Gloway International Co. Ltd. TYA4U2400D17081C 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Corsair CMK16GX4M4B3333C16 4GB
Corsair CMK16GX4M4B3333C16 4GB
内存RAM
Kingston 99U5428-018.A00LF 8GB
Kingston 99U5428-018.A00LF 8GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Kingmax Semiconductor GZOH23F-18---------- 16GB
Kingmax Semiconductor GZOH23F-18---------- 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Kingston 9905624-014.A00G 4GB
Kingston 9905624-014.A00G 4GB
内存RAM
SK Hynix HMT351S6EFR8A-PB 4GB
SK Hynix HMT351S6EFR8A-PB 4GB
AMD R744G2133U1S 4GB
AMD R744G2133U1S 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125U72CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125U72CP8
Nanya Technology NT1GT64U88D0BY-AD 1GB
Nanya Technology NT1GT64U88D0BY-AD 1GB
内存RAM
Kingston ACR16D3LS1KBG/8G 8GB
Kingston ACR16D3LS1KBG/8G 8GB
Patriot Memory (PDP Systems) PSD416G21332S 16GB
Patriot Memory (PDP Systems) PSD416G21332S 16GB
内存RAM
Kingston ACR16D3LS1NGG/4G 4GB
Kingston ACR16D3LS1NGG/4G 4GB
G Skill Intl F4-2800C18-16GRS 16GB
G Skill Intl F4-2800C18-16GRS 16GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Crucial Technology CB16GS2400.C16J 16GB
Crucial Technology CB16GS2400.C16J 16GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Corsair CMK16GX4M2A2666C18 8GB
Corsair CMK16GX4M2A2666C18 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-4000C18-8GTZSW 8GB
G Skill Intl F4-4000C18-8GTZSW 8GB
内存RAM