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Hynix Semiconductor (Hyundai Electronics) HYMP512U64EP8-Y5 1GB
Samsung M3 78T2863RZS-CF7 1GB

Hynix Semiconductor (Hyundai Electronics) HYMP512U64EP8-Y5 1GB vs Samsung M3 78T2863RZS-CF7 1GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HYMP512U64EP8-Y5 1GB

Hynix Semiconductor (Hyundai Electronics) HYMP512U64EP8-Y5 1GB

总分
star star star star star
Samsung M3 78T2863RZS-CF7 1GB

Samsung M3 78T2863RZS-CF7 1GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) HYMP512U64EP8-Y5 1GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP512U64EP8-Y5 1GB
报告一个错误
Samsung M3 78T2863RZS-CF7 1GB 需要考虑的原因
Samsung M3 78T2863RZS-CF7 1GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    54 left arrow 62
    左右 -15% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 3
    测试中的平均数值
  • 更快的写入速度，GB/s
    1,926.6 left arrow 1,785.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    6400 left arrow 5300
    左右 1.21 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HYMP512U64EP8-Y5 1GB
Samsung M3 78T2863RZS-CF7 1GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR2
  • PassMark中的延时，ns
    62 left arrow 54
  • 读取速度，GB/s
    3,585.4 left arrow 4,419.9
  • 写入速度，GB/s
    1,785.9 left arrow 1,926.6
  • 内存带宽，mbps
    5300 left arrow 6400
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 5-5-5-15 / 800 MHz
  • 排名PassMark (越多越好)
    555 left arrow 662

Hynix Semiconductor (Hyundai Electronics) HYMP512U64EP8-Y5 1GB RAM的比较

Samsung M3 78T2863DZS-CE6 1GB

Samsung M3 78T2863RZS-CF7 1GB RAM的比较

Samsung M3 78T2863EHS-CF7 1GB
SK Hynix HMA82GR7MFR4N-UH 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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