RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-4600C19-8GTZSWC 8GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-4600C19-8GTZSWC 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
G Skill Intl F4-4600C19-8GTZSWC 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
G Skill Intl F4-4600C19-8GTZSWC 8GB
报告一个错误
低于PassMark测试中的延时,ns
16
24
左右 -50% 更低的延时
更快的读取速度,GB/s
22.3
16
测试中的平均数值
更快的写入速度,GB/s
21.2
12.5
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-4600C19-8GTZSWC 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
16
读取速度,GB/s
16.0
22.3
写入速度,GB/s
12.5
21.2
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
3952
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-4600C19-8GTZSWC 8GB RAM的比较
Kingston 9965525-155.A00LF 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CMK16GX4M4A2400C16 4GB
AMD R538G1601U2S 8GB
Corsair CMD16GX4M2B3200C16 8GB
SK Hynix HMT351S6CFR8C-PB 4GB
Smart Modular SMS4TDC8C1K0446FCG 8GB
Samsung M393B1K70CH0-CH9 8GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
AMD R5S38G1601U2S 8GB
Corsair CMK32GX4M4Z2933C16 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Micron Technology 18ASF2G72PDZ-2G6D1 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology BL4G24C16U4B.8FB 4GB
ASint Technology SSA302G08-EGN1C 4GB
Corsair CMK64GX4M2A2666C16 32GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3000C16-8GRS 8GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
Micron Technology 18HTF12872AY-800F1 1GB
Kingston 8ATF1G64HZ-2G3B2 8GB
Corsair CMZ16GX3M2A1600C10 8GB
Crucial Technology CT8G4SFS8266.C8FD1 8GB
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology BLM16G44C19U4BL.M8FB 16GB
AMD AE34G1601U1 4GB
V-GEN D4H4GL26A8TS5 4GB
报告一个错误
×
Bug description
Source link