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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston 9905702-014.A00G 8GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Kingston 9905702-014.A00G 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Kingston 9905702-014.A00G 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
43
左右 44% 更低的延时
更快的写入速度,GB/s
12.5
10.8
测试中的平均数值
需要考虑的原因
Kingston 9905702-014.A00G 8GB
报告一个错误
更快的读取速度,GB/s
16.7
16
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston 9905702-014.A00G 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
43
读取速度,GB/s
16.0
16.7
写入速度,GB/s
12.5
10.8
内存带宽,mbps
19200
19200
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2925
3223
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Kingston 9905702-014.A00G 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMD16GX4M4B3000C15 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
G Skill Intl F4-2133C15-4GRR 4GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CMK32GX4M4K4333C19 8GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-2400C15-16GTZRX 16GB
AMD R748G2133U2S 8GB
Mushkin MRA4S320GJJM16G 16GB
Kingston 99U5584-007.A00LF 4GB
SK Hynix HMA851S6CJR6N-VK 4GB
Crucial Technology BL16G32C16U4B.16FE 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M471A2K43EB1-CWE 16GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Samsung M378B2873FH0-CH9 1GB
Samsung M378B2873FHS-CH9 1GB
TwinMOS 8DPT5MK8-TATP 2GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Apacer Technology 78.CAGP7.AZC0B 8GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT8G4SFS824A.C8FBR1 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Corsair CMSX8GX4M1A2666C18 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Kingston 9905625-097.A00G 16GB
报告一个错误
×
Bug description
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