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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Patriot Memory (PDP Systems) 3000 C15 Series 8GB

总分
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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Patriot Memory (PDP Systems) 3000 C15 Series 8GB

Patriot Memory (PDP Systems) 3000 C15 Series 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 28
    左右 14% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13% 更高的带宽
Patriot Memory (PDP Systems) 3000 C15 Series 8GB 需要考虑的原因
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
报告一个错误
  • 更快的读取速度，GB/s
    18.2 left arrow 16
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.2 left arrow 12.5
    测试中的平均数值

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 28
  • 读取速度，GB/s
    16.0 left arrow 18.2
  • 写入速度，GB/s
    12.5 left arrow 14.2
  • 内存带宽，mbps
    19200 left arrow 17000
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 3501

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

Patriot Memory (PDP Systems) 3000 C15 Series 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston KHX3000C15D4/8GX 8GB
Kingston KHX3000C15D4/8GX 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
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Mushkin 991586 2GB
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Apacer Technology 78.C1GM3.C7Z0C 8GB
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Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Kingston 9905701-017.A00G 16GB
Kingston 9905701-017.A00G 16GB
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A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
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Super Talent F24EA8GS 8GB
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Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
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A-DATA Technology AO2P26KC8T1-BXGSHC 8GB
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G Skill Intl F3-1333C9-4GIS 4GB
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A-DATA Technology AM2P24HC8T1-BBFS 8GB
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SK Hynix HMT451S6BFR8A-PB 4GB
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Micron Technology 18ADF2G72PZ-2G3B1 16GB
内存RAM
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Samsung M378B5773DH0-CH9 2GB
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Corsair CM4B8G2J2400A14K 8GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
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Crucial Technology CT16G4DFS8266.C8FB 16GB
内存RAM
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Samsung M395T2863QZ4-CF76 1GB
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Corsair CMD32GX4M4A2800C16 8GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
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G Skill Intl F4-4133C17-8GTZR 8GB
内存RAM
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Kingston KHX1600C9D3/8G 8GB
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Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
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