RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Patriot Memory (PDP Systems) 3866 C18 Series 8GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Patriot Memory (PDP Systems) 3866 C18 Series 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Patriot Memory (PDP Systems) 3866 C18 Series 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
Patriot Memory (PDP Systems) 3866 C18 Series 8GB
报告一个错误
低于PassMark测试中的延时,ns
22
24
左右 -9% 更低的延时
更快的读取速度,GB/s
20.9
16
测试中的平均数值
更快的写入速度,GB/s
18.5
12.5
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Patriot Memory (PDP Systems) 3866 C18 Series 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
22
读取速度,GB/s
16.0
20.9
写入速度,GB/s
12.5
18.5
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
4324
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Patriot Memory (PDP Systems) 3866 C18 Series 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905584-016.A00LF 4GB
Essencore Limited IM44GU48N24-FFFHA0 4GB
Samsung DDR3 8GB 1600MHz 8GB
Micron Technology 8ATF1G64HZ-2G6D1 8GB
Samsung M393B5270CH0-CH9 4GB
Kingston KHX3200C16D4/32GX 32GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
AMD R538G1601U2S-UGO 8GB
Kingston 99U5428-040.A00LF 4GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
Kingston 9905584-016.A00LF 4GB
G Skill Intl F4-2800C16-4GRR 4GB
Kingston 99U5428-063.A00LF 8GB
G Skill Intl F4-3200C14-16GFX 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-3000C16-16GISB 16GB
Samsung M471B5273CH0-CH9 4GB
Corsair CMK16GX4M2Z3600C14 8GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
G Skill Intl F4-2400C16-8GFXR 8GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BLS4G4D240FSC.8FBR2 4GB
Kllisre KRE-D3U1600M/8G 8GB
Crucial Technology CT4G4SFS824A.M8FE 4GB
Samsung M378B1G73QH0-CK0 8GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3000C15-8GVGB 8GB
报告一个错误
×
Bug description
Source link