RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
SK Hynix HMA851S6CJR6N-UH 4GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs SK Hynix HMA851S6CJR6N-UH 4GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
SK Hynix HMA851S6CJR6N-UH 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
100
左右 76% 更低的延时
更快的读取速度,GB/s
16
15.2
测试中的平均数值
更快的写入速度,GB/s
12.5
8.1
测试中的平均数值
需要考虑的原因
SK Hynix HMA851S6CJR6N-UH 4GB
报告一个错误
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
SK Hynix HMA851S6CJR6N-UH 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
100
读取速度,GB/s
16.0
15.2
写入速度,GB/s
12.5
8.1
内存带宽,mbps
19200
19200
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2925
1479
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
SK Hynix HMA851S6CJR6N-UH 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Smart Modular SG564568FG8N6KF-Z2 2GB
Chun Well Technology Holding Limited D4U0836144B 8GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Essencore Limited KD4AGU880-34A170X 16GB
Corsair VSA2GSDS667C4 2GB
Crucial Technology CT8G4SFD824A.C16FDD2 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMAA2GS6CJR8N-XN 16GB
Qimonda 64T128020EDL2.5C2 1GB
Micron Technology 18ASF2G72AZ-2G1B1 16GB
Qimonda 64T128020EDL2.5C2 1GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Kingston 9905403-038.A00LF 4GB
Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-4000C18-8GVK 8GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Samsung M393A5143DB0-CPB 4GB
Kingston 9965525-140.A00LF 8GB
Patriot Memory (PDP Systems) PSD48G266681 8GB
Kingston KVR533D2N4 512MB
Micron Technology 8ATF1G64HZ-2G6E1 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Corsair CMK64GX4M4D3600C18 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
SK Hynix HMA82GS6DJR8N-XN 16GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Maxsun MSD416G26Q3 16GB
报告一个错误
×
Bug description
Source link