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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Transcend Information AQD-SD4U4GN21-SG 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Transcend Information AQD-SD4U4GN21-SG 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Transcend Information AQD-SD4U4GN21-SG 4GB

Transcend Information AQD-SD4U4GN21-SG 4GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16 left arrow 13.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 6.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13% 更高的带宽
Transcend Information AQD-SD4U4GN21-SG 4GB 需要考虑的原因
Transcend Information AQD-SD4U4GN21-SG 4GB
报告一个错误

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Transcend Information AQD-SD4U4GN21-SG 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 24
  • 读取速度，GB/s
    16.0 left arrow 13.6
  • 写入速度，GB/s
    12.5 left arrow 6.3
  • 内存带宽，mbps
    19200 left arrow 17000
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 1764

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

Transcend Information AQD-SD4U4GN21-SG 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
Corsair CMD32GX4M4C3200C14T 8GB
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内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 9905678-041.A00G 4GB
Kingston 9905678-041.A00G 4GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
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Kingston 9905622-024.A00G 4GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston KMKYF9-MID 8GB
Kingston KMKYF9-MID 8GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Corsair CMK16GX4M2F4500C19 8GB
Corsair CMK16GX4M2F4500C19 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
SK Hynix HMA81GR7AFR8N-VK 8GB
SK Hynix HMA81GR7AFR8N-VK 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Crucial Technology BLS8G4D240FSA.M16FAD 8GB
Crucial Technology BLS8G4D240FSA.M16FAD 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingston ACR26D4S9S8ME-8 8GB
Kingston ACR26D4S9S8ME-8 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CMD16GX4M4B3200C16-R 4GB
Corsair CMD16GX4M4B3200C16-R 4GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Samsung M378A2K43DB1-CVF 16GB
Samsung M378A2K43DB1-CVF 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
EXCELERAM EKBLACK4163016AD 8GB
EXCELERAM EKBLACK4163016AD 8GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Kingston KF2666C16D4/8G 8GB
Kingston KF2666C16D4/8G 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BL16G32C16U4R.16FE 16GB
Crucial Technology BL16G32C16U4R.16FE 16GB
内存RAM