Kingston 9905316-106.A02LF 1GB vs Corsair CMD16GX4M2B3600C18 8GB

总分

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

总分

Corsair CMD16GX4M2B3600C18 8GB

Corsair CMD16GX4M2B3600C18 8GB

差异规格评论

差异

Kingston 9905316-106.A02LF 1GB

需要考虑的原因
Kingston 9905316-106.A02LF 1GB

报告一个错误

更快的读取速度，GB/s

4 20.9

测试中的平均数值
更快的写入速度，GB/s

2,475.5 16.6

测试中的平均数值

Corsair CMD16GX4M2B3600C18 8GB

需要考虑的原因
Corsair CMD16GX4M2B3600C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

18 56

左右 -211% 更低的延时
更高的内存带宽，mbps

17000 8800

左右 1.93 更高的带宽

规格

完整的技术规格清单

Kingston 9905316-106.A02LF 1GB

Corsair CMD16GX4M2B3600C18 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 18
读取速度，GB/s

4,878.3 20.9
写入速度，GB/s

2,475.5 16.6
内存带宽，mbps

8800 17000

Other

描述

PC2-8800, SSTL 1.8V, CAS Supported: 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

598 3601

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Crucial Technology CT16G4DFD8266.M16FJ 16GB

Crucial Technology CT16G4DFD8266.M16FJ 16GB

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

Crucial Technology CT4G4SFS824A.C8FE 4GB

Crucial Technology CT4G4SFS824A.C8FE 4GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

G Skill Intl F4-3200C16-8GTZKY 8GB

G Skill Intl F4-3200C16-8GTZKY 8GB

G Skill Intl F3-1600C11-8GIS 8GB

G Skill Intl F3-1600C11-8GIS 8GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

G Skill Intl F4-3200C15-16GTZR 16GB

G Skill Intl F4-3200C15-16GTZR 16GB

Corsair CMX8GX3M2A2000C9 4GB

Corsair CMX8GX3M2A2000C9 4GB

Avant Technology J641GU42J7240N3 8GB

Avant Technology J641GU42J7240N3 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Team Group Inc. TEAMGROUP-D4-3866 4GB

Team Group Inc. TEAMGROUP-D4-3866 4GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

G Skill Intl F4-3000C15-4GVSB 4GB

G Skill Intl F4-3000C15-4GVSB 4GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

G Skill Intl F4-2666C18-4GRS 4GB

G Skill Intl F4-2666C18-4GRS 4GB

Kingston 99U5474-026.A00LF 4GB

Kingston 99U5474-026.A00LF 4GB

Corsair CM4X16GE2400C16S4 16GB

Corsair CM4X16GE2400C16S4 16GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

SK Hynix V-GeN D4H4GL30A8TX5 4GB

SK Hynix V-GeN D4H4GL30A8TX5 4GB