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Kingston 9905403-061.A00LF 2GB
G Skill Intl F4-3200C16-8GTZSW 8GB

Kingston 9905403-061.A00LF 2GB vs G Skill Intl F4-3200C16-8GTZSW 8GB

总分
star star star star star
Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

总分
star star star star star
G Skill Intl F4-3200C16-8GTZSW 8GB

G Skill Intl F4-3200C16-8GTZSW 8GB

差异 规格 评论

差异

Kingston 9905403-061.A00LF 2GB 需要考虑的原因
Kingston 9905403-061.A00LF 2GB
报告一个错误
G Skill Intl F4-3200C16-8GTZSW 8GB 需要考虑的原因
G Skill Intl F4-3200C16-8GTZSW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 57
    左右 -119% 更低的延时
  • 更快的读取速度，GB/s
    19.4 left arrow 6.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.3 left arrow 5.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-061.A00LF 2GB
G Skill Intl F4-3200C16-8GTZSW 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    57 left arrow 26
  • 读取速度，GB/s
    6.8 left arrow 19.4
  • 写入速度，GB/s
    5.5 left arrow 15.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1244 left arrow 3648

Kingston 9905403-061.A00LF 2GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMX8GX3M1A1600C11 8GB

G Skill Intl F4-3200C16-8GTZSW 8GB RAM的比较

Samsung M3 78T3354BZ0-CCC 256MB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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G Skill Intl F2-8500CL5-2GBPI 2GB
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Samsung M3 78T2953EZ3-CF7 1GB
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G Skill Intl F4-3600C17-8GTRG 8GB
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A-DATA Technology AM2L16BC4R1-B0AS 4GB
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G Skill Intl F4-2666C15-4GVR 4GB
内存RAM
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Ramaxel Technology RMT3020EC58E9F1333 4GB
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Gold Key Technology Co Ltd NMUD480E85-2666E 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
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Wilk Elektronik S.A. GR2400D464L17S/4G 4GB
内存RAM
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Crucial Technology CT51264BD1339.M16F 4GB
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G Skill Intl F4-3200C22-32GRS 32GB
内存RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
G Skill Intl F4-3600C16-8GTZN 8GB
G Skill Intl F4-3600C16-8GTZN 8GB
内存RAM
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Samsung M395T2863QZ4-CF76 1GB
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Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
内存RAM
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Nanya Technology M2X4G64CB8HG9N-DG 4GB
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Crucial Technology CT16G4SFD8213.M16FA 16GB
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