Kingston 9905403-156.A00LF 2GB vs G Skill Intl F4-4000C17-8GTZRB 8GB

总分

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

总分

G Skill Intl F4-4000C17-8GTZRB 8GB

G Skill Intl F4-4000C17-8GTZRB 8GB

差异规格评论

差异

Kingston 9905403-156.A00LF 2GB

需要考虑的原因
Kingston 9905403-156.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

18 25

左右 28% 更低的延时

G Skill Intl F4-4000C17-8GTZRB 8GB

需要考虑的原因
G Skill Intl F4-4000C17-8GTZRB 8GB

报告一个错误

更快的读取速度，GB/s

21 17.7

测试中的平均数值
更快的写入速度，GB/s

19.4 13.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-156.A00LF 2GB

G Skill Intl F4-4000C17-8GTZRB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

18 25
读取速度，GB/s

17.7 21.0
写入速度，GB/s

13.1 19.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2926 4129

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

G Skill Intl F4-4000C17-8GTZRB 8GB

G Skill Intl F4-4000C17-8GTZRB 8GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT16G4SFD8266.M16FH 16GB

Crucial Technology CT16G4SFD8266.M16FH 16GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

G Skill Intl F4-3200C16-8GTZ 8GB

G Skill Intl F4-3200C16-8GTZ 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

G Skill Intl F4-3333C16-16GTZB 16GB

G Skill Intl F4-3333C16-16GTZB 16GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Corsair CMD64GX4M4A2400C14 16GB

Corsair CMD64GX4M4A2400C14 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Kingston XJV223-MIE 16GB

Kingston XJV223-MIE 16GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB

GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Crucial Technology BLS16G4D30AESB.M16FE 16GB

Crucial Technology BLS16G4D30AESB.M16FE 16GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Crucial Technology BL32G32C16U4B.M16FB1 32GB

Crucial Technology BL32G32C16U4B.M16FB1 32GB

Hoodisk Electronics Co Ltd GKH800UD51208-1600 8GB

Hoodisk Electronics Co Ltd GKH800UD51208-1600 8GB

Gloway International (HK) STK4U2133D15081C 8GB

Gloway International (HK) STK4U2133D15081C 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Team Group Inc. TEAMGROUP-UD4-4500 8GB

Team Group Inc. TEAMGROUP-UD4-4500 8GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

G Skill Intl F4-3200C15-16GTZSK 16GB

G Skill Intl F4-3200C15-16GTZSK 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

G Skill Intl F4-3333C16-4GRKD 4GB

G Skill Intl F4-3333C16-4GRKD 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Micron Technology AFSD416ES1P 16GB

Micron Technology AFSD416ES1P 16GB