Kingston 9905471-002.A00LF 2GB vs Chun Well Technology Holding Limited D4U1636144B 16GB

总分

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

总分

Chun Well Technology Holding Limited D4U1636144B 16GB

Chun Well Technology Holding Limited D4U1636144B 16GB

差异规格评论

差异

Kingston 9905471-002.A00LF 2GB

需要考虑的原因
Kingston 9905471-002.A00LF 2GB

报告一个错误

Chun Well Technology Holding Limited D4U1636144B 16GB

需要考虑的原因
Chun Well Technology Holding Limited D4U1636144B 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 73

左右 -181% 更低的延时
更快的读取速度，GB/s

23.7 6.1

测试中的平均数值
更快的写入速度，GB/s

18.3 4.7

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Kingston 9905471-002.A00LF 2GB

Chun Well Technology Holding Limited D4U1636144B 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

73 26
读取速度，GB/s

6.1 23.7
写入速度，GB/s

4.7 18.3
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1021 4124

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Chun Well Technology Holding Limited D4U1636144B 16GB

Chun Well Technology Holding Limited D4U1636144B 16GB

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

Crucial Technology CT4G4DFS824A.M8FE 4GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Micron Technology M471A1K43CB1-CTD 8GB

Micron Technology M471A1K43CB1-CTD 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

G Skill Intl F4-3333C16-8GTZB 8GB

G Skill Intl F4-3333C16-8GTZB 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-2800C18-16GRS 16GB

G Skill Intl F4-2800C18-16GRS 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology CB8GS2400.C8ET 8GB

Crucial Technology CB8GS2400.C8ET 8GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Crucial Technology CT8G4SFS8213.C8FH1 8GB

Crucial Technology CT8G4SFS8213.C8FH1 8GB

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

Micron Technology 16ATF2G64HZ-2G3E1 16GB

Micron Technology 16ATF2G64HZ-2G3E1 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

SK Hynix HMA82GS6CJR8N-UH 16GB

SK Hynix HMA82GS6CJR8N-UH 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Corsair CMK8GX4M1D2666C16 8GB

Corsair CMK8GX4M1D2666C16 8GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Crucial Technology BL16G32C16U4R.16FE 16GB

Crucial Technology BL16G32C16U4R.16FE 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Micron Technology 16ATF2G64AZ-2G6B1 16GB

Micron Technology 16ATF2G64AZ-2G6B1 16GB