Kingston 99U5429-014.A00LF 4GB vs Micron Technology 4ATF51264HZ-2G3E1 4GB

总分

Kingston 99U5429-014.A00LF 4GB

Kingston 99U5429-014.A00LF 4GB

总分

Micron Technology 4ATF51264HZ-2G3E1 4GB

Micron Technology 4ATF51264HZ-2G3E1 4GB

差异规格评论

差异

Kingston 99U5429-014.A00LF 4GB

需要考虑的原因
Kingston 99U5429-014.A00LF 4GB

报告一个错误

Micron Technology 4ATF51264HZ-2G3E1 4GB

需要考虑的原因
Micron Technology 4ATF51264HZ-2G3E1 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 72

左右 -167% 更低的延时
更快的读取速度，GB/s

14.8 4.9

测试中的平均数值
更快的写入速度，GB/s

10.2 2.9

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston 99U5429-014.A00LF 4GB

Micron Technology 4ATF51264HZ-2G3E1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

72 27
读取速度，GB/s

4.9 14.8
写入速度，GB/s

2.9 10.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

776 2173

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Team Group Inc. UD5-6400 16GB

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G Skill Intl F4-3600C19-8GSXF 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 8ATF1G64HZ-2G6H1 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CM4X4GF2400C16N2 4GB

Corsair CM4X4GF2400C16N2 4GB

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Nanya Technology NT1GT64U88D0BY-AD 1GB

Corsair CMK8GX4M2C3000C16 4GB

Corsair CMK8GX4M2C3000C16 4GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Samsung M471A1K43CBCBCRC 8GB

Samsung M471A1K43CBCBCRC 8GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

Crucial Technology CT16G4SFRA32A.C16FP 16GB

Crucial Technology CT16G4SFRA32A.C16FP 16GB

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

G Skill Intl F4-3000C15-8GRKB 8GB

G Skill Intl F4-3000C15-8GRKB 8GB